DEMO9RS08KA8【PDF 24/42 页】BOARD DEMO FOR MC9RS08KA8

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Electrical Characteristics

Table 16. Flash Characteristics (continued)

Characteristic

Program/Erase voltage

Symbol

V PP

Min

11.8

Typical 1

12

Max

12.2

Unit

V

V PP current

Program

Mass erase

Supply voltage for read operation

0 < f Bus < 10 MHz

Byte program time

Mass erase time

Cumulative program HV time 2

Total cumulative HV time

(total of t me & t hv applied to device)

HVEN to program setup time

PGM/MASS to HVEN setup time

HVEN hold time for PGM

HVEN hold time for MASS

V PP to PGM/MASS setup time

HVEN to V PP hold time

V PP rise time 3

Recovery time

Program/erase endurance

T L to T H = –40 ° C to 85 ° C

Data retention

I VPP_prog

I VPP_erase

V Read

t prog

t me

t hv

t hv_total

t pgs

t nvs

t nvh

t nvh1

t vps

t vph

t vrs

t rcv

—

t D_ret

—

—

1.8

20

500

—

—

10

5

5

100

20

20

200

1

1000

15

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

200

100

5.5

40

—

8

2

—

—

—

—

—

—

—

—

—

—

μ A

μ A

V

μ s

ms

ms

hours

μ s

μ s

μ s

μ s

ns

ns

ns

μ s

cycles

years

1

2

Typicals are measured at 25 ° C.

t hv is the cumulative high voltage programming time to the same row before next erase. Same address can not be

programmed more than twice before next erase.

3 Fast V PP rise time may potentially trigger the ESD protection structure, which may result in over current flowing into the pad

and cause permanent damage to the pad. External filtering for the V PP power source is recommended. An example V PP

filter is shown in Figure 22 .

100 Ω

V PP

12 V

1 nF

Figure 22. Example V PP Filtering

MC9RS08KA8 Series MCU Data Sheet, Rev. 4

24

Freescale Semiconductor

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